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Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission

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5 Author(s)
Albert, S. ; ISOM and Dept. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain ; Bengoechea-Encabo, A. ; Sanchez-Garcia, M.A. ; Calleja, E.
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This work reports on the morphology and light emission characteristics of ordered InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy. Within the growth temperature range of 750 to 650 °C, the In incorporation can be modified either by the growth temperature, the In/Ga ratio, or the III/V ratio, following different mechanisms. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength and line-shape. Furthermore, yellow-white emission is obtained at room temperature from nanostructures with a composition-graded active InGaN region obtained by temperature gradients during growth.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 11 )