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A Dual Power-Mode Multi-Band Power Amplifier With Envelope Tracking for Handset Applications

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6 Author(s)
Yunsung Cho ; Div. of Inf. Technol. Convergence Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea ; Daehyun Kang ; Jooseung Kim ; Dongsu Kim
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This paper presents a dual power-mode and multi-band power amplifier (PA) for handset applications that improves the efficiency in low-power regions. This PA operates in two modes through path control by a shunt switched capacitor. The proposed control method provides efficient mode control without any efficiency degrading and bandwidth (BW) limiting. The proposed PA, in conjunction with a boosted supply modulator for envelope tracking (ET) operation not only in the high-power mode, but also in the low-power mode, delivers good performance at all average output power levels. The linearity is improved by ET through a proper envelope-shaping method. For demonstrative purposes, the PA and supply modulator are implemented using an InGaP/GaAs heterojunction bipolar transistor and AIGaAs/InGaAs enhancement/depletion-mode pseudomorphic high electron-mobility transistor process and a 0.18-μ m CMOS process, respectively. The ET PA is tested across the range of 1.7-2.0 GHz using a long-term evolution signal with 16 quadrature amplitude modulation, a 7.5-dB peak-to-average power ratio, and 10-MHz BW. The proposed dual power-mode multi-band ET PA delivers good performance for high- and low-power modes, indicating that the architecture is promising for handset PA applications.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:61 ,  Issue: 4 )