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Static and dynamic characteristics of self-assembled InAs-GaAs quantum dot laser considering carrier recombination and carrier escape time by using circuit-level modeling

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2 Author(s)
Mahdi Razm- Pa ; Electronic Department of Islamic Azad University, Boushehr, Iran ; Farzin Emami

Considering the excited state and the standard rate equations, this study provides a new circuit model for self-assembled quantum dot laser made by InGaAs/GaAs and investigates the performances of this kind of laser. The carrier dynamic effects on static and dynamic performances of self-assembled laser (QD) have been analyzed. We also show that quantum-dot lasers are quite sensitive to the crystal quality outside as well as inside quantum dots.

Published in:

2013 Spanish Conference on Electron Devices

Date of Conference:

12-14 Feb. 2013