By Topic

Static and dynamic characteristics of self-assembled InAs-GaAs quantum dot laser considering carrier recombination and carrier escape time by using circuit-level modeling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Pa, M.R. ; Electron. Dept., Islamic Azad Univ., Boushehr, Iran ; Emami, F.

Considering the excited state and the standard rate equations, this study provides a new circuit model for self-assembled quantum dot laser made by InGaAs/GaAs and investigates the performances of this kind of laser. The carrier dynamic effects on static and dynamic performances of self-assembled laser (QD) have been analyzed. We also show that quantum-dot lasers are quite sensitive to the crystal quality outside as well as inside quantum dots.

Published in:

Electron Devices (CDE), 2013 Spanish Conference on

Date of Conference:

12-14 Feb. 2013