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In this paper, a new circuit model for self-assembled quantum dot (SAQD) laser made by InGaAs/GaAs structures is presented based on the excited state and the standard rate equations. The model improves the previously offered circuit models and also provides and investigates the performance of this kind of laser. The effects of QDs coverage factor, inhomogeneous broadening, which its physical source is the size fluctuation of quantum dot in forming self assembled quantum dots, as well as cavity length, on SAQD laser have been analyzed. The results of simulation show that the increase of cavity length as well as the increase of QDs coverage causes the output power to increase. On the other hand, the coverage factor increase and the inhomogeneous broadening degradation lead to increase the modulation band width.