Cart (Loading....) | Create Account
Close category search window

Partially Depleted SOI Versus Deep N-Well Protected Bulk-Si MOSFETs: A High-Temperature RF Study for Low-Voltage Low-Power Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Emam, M. ; Incize, Louvain-la-Neuve, Belgium ; Raskin, J.

The design options for low-voltage low-power (LVLP) applications are not limited to the circuit level, but it should start with the right choice of device technology and architecture. This paper presents a comparative study between a special structure of bulk MOSFET called the deep n-well protected device and the partially depleted silicon-on-insulator device. This paper shows the advantage of each device for different operation schemes while concentrating on the RF behavior for very low bias conditions. The study shows the lower limit for the bias conditions for the devices to correctly operate in RF. It also presents the effect of high temperature on the key figures of merit for dc and RF operations for high-performance and LVLP operation regimes.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:61 ,  Issue: 4 )

Date of Publication:

April 2013

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.