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Passivation of n ^{+} -Type Si Surfaces by Low Temperature Processed SiO _{2} /Al _{2} O _{3} Stacks

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5 Author(s)
Bordihn, S. ; Hanwha Q Cells GmbH, Bitterfeld-Wolfen, Germany ; Dingemans, G. ; Mertens, V. ; Muller, J.W.
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The surface passivation of SiO2/Al 2O3 stacks prepared at low process temperatures was investigated on phosphorous diffused n+-type Si surfaces with a broad range of sheet resistances. Two kinds of SiO2 films were prepared, the first with plasma-enhanced chemical vapor deposition (PECVD) and the second in a wet chemical process. After atomic layer deposition of the Al2O3 capping layer, the resulting SiO2/Al2O3 stacks differ in the polarity of their fixed charge density, i.e., the PECVD SiO2 stacks had a positive and the wet chemically grown SiO2 stacks a negative fixed charge density. The PECVD SiO2/Al2O3 stacks resulted in a high surface passivation over a broad range of sheet resistances whereas the wet chemically grown SiO2 stacks were only feasible for diffused surfaces with low sheet resistances (<; 100 Ω/□). By corona charging experiments, it was established that the field effect based on a negative fixed charge density was the reason for the loss in surface passivation in the specific range of diffused surfaces.

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Photovoltaics, IEEE Journal of  (Volume:3 ,  Issue: 3 )