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A FET Structure Field Emission Device With High-Speed Pulse Signal Control

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3 Author(s)
Liu Xiang ; Display research center, Jiangsu Province key engineering research center, School of Electronic Science and engineering, Southeast University, Jiangsu, China ; Li Chi ; Lei Wei

In this letter, a current driving method by using a field-effect transistor (FET)-modulated structure for a carbon-nanotube field emission device (FED) is reported. This device can obtain a stable large emission current modulated value by tunneling the gate voltage of the metal–oxide–semiconductor FET, i.e., from 2 to 128 \mu\hbox {A} (the anode voltage is 1000 V). Moreover, a subpixel FED and a periphery circuit are also designed. This device can dramatically produce a working pulse emission current (peak current: 350 \mu\hbox {A} ) by controlling a low-voltage high-speed pulse signal (peak: 22.5 V). Compared with the previous triode FEDs, this FET-modulated device has more advantages in driving circuit design. If the integrated process for this device can be realized, it will promote the FED's application to launch on the market.

Published in:

IEEE Electron Device Letters  (Volume:34 ,  Issue: 4 )