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Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

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12 Author(s)
Takuji Hosoi ; Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan ; Shuji Azumo ; Yusaku Kashiwagi ; Shigetoshi Hosaka
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We have developed AlON high-k gate dielectric technology that can be easily implemented into both planar and trench SiC-based MOSFETs. On the basis of electrical characterization and numerical simulation, the thickness ratio of the AlON layer to the SiO2 interlayer and nitrogen content in AlON film were carefully optimized to enhance device performance and reliability.

Published in:

Electron Devices Meeting (IEDM), 2012 IEEE International

Date of Conference:

10-13 Dec. 2012