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Threshold Vacuum Switch (TVS) on 3D-stackable and 4F2 cross-point bipolar and unipolar resistive random access memory

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15 Author(s)
ChiaHua Ho ; Nat. Nano Device Labs. (NDL), Nat. Appl. Res. Labs. (NARL), Taiwan ; Hsin-Hau Huang ; Ming-Taou Lee ; Cho-Lun Hsu
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A 3D stackable and bidirectional Threshold Vacuum Switching (TVS) selector using the same WOx material as the RRAM element is reported. It provides the highest reported current density of >108 A/cm2 and the highest selectivity of >105. Stress test at high current density indicates >108 cycle capability for Reset/Set operation. A mechanism based on recombination of oxygen-ions and vacancies is proposed for the observed volatile switching of TVS. Utilizing the threshold characteristics of the TVS selector, a two-step reading waveform offers potential for 3D-stackable and 4F2 cross-point RRAM applications.

Published in:

Electron Devices Meeting (IEDM), 2012 IEEE International

Date of Conference:

10-13 Dec. 2012