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Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials

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18 Author(s)
K. Virwani ; IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120 ; G. W. Burr ; R. S. Shenoy ; C. T. Rettner
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BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-3] are shown to scale to the <;30nm CDs and <;12nm thicknesses found in advanced technology nodes. Switching speeds at the high (>100uA) currents of NVM writes can reach 15ns; NVM reads at typical (~5uA) current levels can be ≪1usec.

Published in:

Electron Devices Meeting (IEDM), 2012 IEEE International

Date of Conference:

10-13 Dec. 2012