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Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays

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10 Author(s)
Myoung-Jae Lee ; Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Gyeonggi-Do, Korea, 446-712 ; Dongsoo Lee ; Hojung Kim ; Hyun-Sik Choi
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We present here on a switch device made of a nitridized-chalcogenide glass for application in nanoscale array circuits. Previously, AsTeGeSi-based switches have had key issues with performance degradation over time. This is usually due to changes in the Te concentration in the device active region [1-3]. However, our AsTeGeSiN switches were able to overcome this limitation as well as scale down to 30 nm with an on current of 100 μA (J > 1.1×107A/cm2). Their cycling performance was shown to be greater than 108. Also, we demonstrate a memory cell using a TaOx resistance memory with the AsTeGeSiN select device.

Published in:

Electron Devices Meeting (IEDM), 2012 IEEE International

Date of Conference:

10-13 Dec. 2012