Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Galloway, K.F. ; Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA ; Pease, R.L. ; Schrimpf, R. ; Emily, D.W.

The fifty year history of radiation effects in bipolar transistors at NSREC is summarized, covering neutron-induced displacement damage, total ionizing dose response (including enhanced low dose rate sensitivity, ELDRS) and single event effects. These phenomena, particularly TID and ELDRS in bipolar transistors, have received significant attention at NSREC. Several other radiation effects such as thermal mechanical shock, electrical overstress, prompt dose rate photoresponse and the response to neutral particle beams are not addressed.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:60 ,  Issue: 3 )