Cart (Loading....) | Create Account
Close category search window
 

Analysis of Interdiffused InGaN Quantum Wells for Visible Light-Emitting Diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hongping Zhao ; Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA ; Xuechen Jiao ; Tansu, N.

Interdiffused InGaN quantum wells (QWs) with various interdiffusion lengths (Ld) are comprehensively studied as the improved active region for Light-Emitting Diodes (LEDs) emitting in the blue and green spectral regime. The electron-hole wavefunction overlap (Γe_hh), spontaneous emission spectra, and spontaneous emission radiative recombination rate (Rsp) for the interdiffused InGaN QWs are calculated and compared to that of the conventional InGaN QWs emitting in the similar wavelengths. The calculations of band structure, confined energy levels, electron and hole wavefunctions, and spontaneous emission radiative recombination rate (Rsp) are based on the self-consistent 6-band k·p method, taking into account the valence band mixing, strain effect, spontaneous and piezoelectric polarizations and carrier screening effect. Studies indicate a significant enhancement of the electron-hole wavefunction overlap (Γe_hh) and the spontaneous emission radiative recombination rate (Rsp) for the interdiffused InGaN QWs. The improved performance for the interdiffused InGaN QWs is due to the modification of the band lineups at the InGaN-GaN interfaces, which leads to the enhancement of the electron-hole wavefunction overlap significantly.

Published in:

Display Technology, Journal of  (Volume:9 ,  Issue: 4 )

Date of Publication:

April 2013

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.