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Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic

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2 Author(s)
V. I. Shashkin ; Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia ; N. V. Vostokov

We discuss the characteristics of new sensing elements based on a symmetrical metal-semiconductor-metal structure, which are designed for detection of microwave-terahertz signals. The schemes of connection of the sensing elements in the high-frequency path and the low-frequency measuring circuit are considered. Expressions for the volt-watt sensitivity and the noise-equivalent power are obtained. Comparison of the obtained characteristics with those of the detector zero-bias Schottky (Mott)-barrier diode is carried out. It is shown that the characteristics of the symmetrical sensing elements are comparable with or exceed in some cases similar characteristics of the detector zero-bias diodes.

Published in:

IEEE Journal of the Electron Devices Society  (Volume:1 ,  Issue: 3 )