Cart (Loading....) | Create Account
Close category search window

Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Takahashi, Motoki ; Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama-shi, Kanagawa 223-8522, Japan ; Syafawati Humam, Nurrul ; Tsumori, Nobuhiro ; Saiki, Toshiharu
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence (PL) spectroscopy of single InAs/InP QDs on which a GeSbTe thin film is deposited. A significant red-shift of the PL peak energy upon amorphization and subsequent recovery by recrystallization with laser annealing were observed.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 9 )

Date of Publication:

Mar 2013

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.