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Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

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6 Author(s)
Takahashi, Motoki ; Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama-shi, Kanagawa 223-8522, Japan ; Syafawati Humam, Nurrul ; Tsumori, Nobuhiro ; Saiki, Toshiharu
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A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence (PL) spectroscopy of single InAs/InP QDs on which a GeSbTe thin film is deposited. A significant red-shift of the PL peak energy upon amorphization and subsequent recovery by recrystallization with laser annealing were observed.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 9 )

Date of Publication:

Mar 2013

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