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Backgate Modulation Technique for Higher Efficiency Envelope Tracking

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5 Author(s)
Ghajar, M.R. ; Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA ; Wilk, S.J. ; Lepkowski, W. ; Bakkaloglu, B.
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A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:61 ,  Issue: 4 )