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A High Voltage Swing Dual-Band Bandpass \Delta \Sigma Modulator for Mobile Base-Station

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4 Author(s)
Bonghyuk Park ; Mobile RF Res. Team, Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea ; Seunghyun Jang ; Ostrovskyy, P. ; Jaeho Jung

A fully integrated high voltage swing dual-band continuous-time bandpass delta-sigma modulator (CT BPDSM) with a high voltage swing and fabricated on a 0.25 μm SiGe BiCMOS is presented. The proposed CT BPDSM consists of a two-stage second-order resonator, a high speed comparator, multi-feedback current DACs, and a high voltage swing driver. The band selection is controlled using a capacitor bank, and fine frequency tuning is conducted by a varactor. At 883 and 955 MHz, the implemented BPDSM with a high voltage swing shows a peak SNR of 40.6 and 41.9 dB, and an error vector magnitude (EVM) of 5.48%, 3.48%, respectively. In addition, it has a differential output voltage swing of 1.55 Vp-p with a dc power consumption of 635.3 mW.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:23 ,  Issue: 4 )