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Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

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5 Author(s)
Qian Zhou ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Shao-Ming Koh ; Thanigaivelan, T. ; Henry, T.
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We demonstrate a novel technique to reduce the nickel silicide (NiSi) contact resistance Rcon in strained n-channel MOSFETs (n-FETs) with silicon carbon (Si:C) stressors, where a presilicide aluminum (Al) implant is performed and the Al profile is found to be affected by carbon (C). Al diffusion during silicidation is retarded by the presence of C and a high Al concentration is retained within the NiSi:C film, which is considered to be the main reason for electron barrier height ΦBn reduction in NiSi:C contacts. Ge preamorphization implant prior to Al implant further reduces the ΦBn to 0.44 eV. Integration of this technique in n-FETs with Si:C stressors achieves a 50% reduction in source/drain series resistance and 12% enhancement in saturation drive current. Negligible impact on the device short-channel effects is observed. When Al segregates at the NiSi/Si interface, the hole barrier height ΦBp is lowered, and such an Al profile can be used for the p-FETs. Al profile engineering shows a promise as a single-metal-silicide solution for selective Rcon optimization in CMOS.

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Electron Devices, IEEE Transactions on  (Volume:60 ,  Issue: 4 )