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Low voltage field emission from PbZr0.2Ti0.8O3-coated silicon nanotips

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4 Author(s)
Fletcher, P.C. ; Dept. of Mech. Sci. & Eng., Univ. of Illinois, Urbana, IL, USA ; Mangalam, R.V.K. ; Martin, L.W. ; King, W.P.

We report field emission from nanometer-sharp tips of polarized PbZr0.2Ti0.8O3 (PZT) and silicon. The ferroelectric PZT emitters are a high-density array of single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT in a batch fabrication process. The PZT emitter tips begin to emit electrons at fields as low as 2 V/μm and reach threshold emission at fields as low as 3.9 V/μm. This is considerably lower than the threshold field of 7.2 V/μm for uncoated silicon emitter tips. This improvement is about one order of magnitude improvement over previous publications for silicon tips. Using a Fowler-Nordheim analysis, we calculate the effective work function of the PZT film to be 1.00 eV and the field amplification factor to be 1525.

Published in:

Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on

Date of Conference:

20-24 Jan. 2013