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Thin wafer handling is an important issue in 3D integration technologies. This paper reports on an efficient method for bonding a thin wafer and debonding it at room temperature from a carrier wafer. This method addresses the major problem of fragility and flexibility in handling of thin wafers used in TSV fabrication. In the presented method the carrier wafer is spin coated with an electrochemically active polymer adhesive. It is then bonded to a device wafer. The wafer stack is thinned and finally released from the carrier wafer by applying a voltage.