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Ni-Containing Electrodes for Compact Integration of Resistive Random Access Memory With CMOS

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7 Author(s)
Wang, X.P. ; Institute of Microelectronics, Agency for Science, Technology and Research, Singapore, ; Fang, Z. ; Chen, Z.X. ; Kamath, A.R.
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Different {\rm HfO}_{x} -based resistive random access memory stacks with Ni-containing electrodes, including NiSi and {\rm Ni}({\rm Ge}_{1-x}{\rm Si}_{x}) , which can be easily formed on the source/drain of a transistor, are systematically investigated in this letter. The involvement of Ni (or {\rm NiO}_{x} formed) at the interface has been found very beneficial to good switching properties. Moreover, RESET current can be effectively reduced for silicide electrodes compared to the n^{+} -Si case, attributed to the formation of a thicker interfacial layer involving {\rm NiO}_{x} and/or {\rm GeO}_{x} . In addition, a well-controlled interfacial layer is believed to be very helpful for the switching uniformity improvement. All these observations suggest the prospect of a compact 1T-1R integration scheme with Ni-containing electrodes.

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Electron Device Letters, IEEE  (Volume:34 ,  Issue: 4 )