Different -based resistive random access memory stacks with Ni-containing electrodes, including NiSi and , which can be easily formed on the source/drain of a transistor, are systematically investigated in this letter. The involvement of Ni (or formed) at the interface has been found very beneficial to good switching properties. Moreover, RESET current can be effectively reduced for silicide electrodes compared to the -Si case, attributed to the formation of a thicker interfacial layer involving and/or . In addition, a well-controlled interfacial layer is believed to be very helpful for the switching uniformity improvement. All these observations suggest the prospect of a compact 1T-1R integration scheme with Ni-containing electrodes.