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Induced Anomalous Dispersion in Semiconductor Lasers

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3 Author(s)
Kalagara, H. ; Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA ; Eliseev, P.G. ; Osinski, M.

In semiconductor lasers, the nonlinear parametric interaction of spectral modes, with one of them being at sufficiently high intensity, results in anomalous dispersion. Consequently, in the vicinity of a strong driving wave (mode), the phase index, group index, linewidth broadening, and the gain experienced by a neighboring weak mode are strongly perturbed. The magnitude of nonlinear perturbation depends on driving wave intensity, frequency detuning between the modes, lifetime of the carriers in the system, and optical confinement factor of the laser structure. In this paper, the perturbation of optical characteristics of probe (weak) wave in presence of a strong driving wave is illustrated for GaAs/AlGaAs separate confinement heterostructure and InGaAs/AlGaAs/GaAs double-quantum-well semiconductor ridge waveguide lasers using numerical modeling.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 4 )