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Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3- \mu{\rm m} Wavelength

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7 Author(s)
Sato, N. ; Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan ; Shirao, M. ; Sato, T. ; Yukinari, M.
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Room-temperature continuous-wave operation of a 1.3-$mu{rm m}$ npn-AlGaInAs/InP transistor laser is successfully achieved for the first time. A threshold current of 39 mA and an external differential quantum efficiency of 13% are obtained under common base operation, while simultaneous transistor action is achieved with a current gain $beta$ of 0.02.

Published in:

Photonics Technology Letters, IEEE  (Volume:25 ,  Issue: 8 )

Date of Publication:

April15, 2013

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