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Improving Electrical Properties of Bottom-Gate Poly(3-Hexylthiophene) Thin-Film Transistor Using \hbox {CF}_{4} Plasma Treatment

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2 Author(s)
Hung-Chi Wu ; Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University , Hsinchu, Taiwan ; Chao-Hsin Chien

In this letter, the effect of \hbox {CF}_{4} plasma treatment on poly(3-hexylthiophene)-based organic thin-film transistors has been investigated. It was found that \hbox {CF}_{4} plasma treatment on the source/drain electrode can reduce contact resistance and increase mobility. The \hbox {CF}_{4} plasma treatment can increase the mobility from 0.0021 to 0.0102  \hbox {cm}^{2}/\hbox {V}\cdot\hbox {s} and decrease the contact resistance by about 70%. Moreover, the \hbox {CF}_{4} plasma treatment is compatible with the bottom-gate bottom-contact structure without degrading the \hbox {SiO}_{2} layer.

Published in:

IEEE Electron Device Letters  (Volume:34 ,  Issue: 4 )