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Improved Charge-Trapping Characteristics of  \hbox {BaTiO}_{3} by Zr Doping for Nonvolatile Memory Applications

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3 Author(s)
Huang, X.D. ; Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, ; Sin, J.K.O. ; Lai, P.T.

The charge-trapping characteristics of \hbox {BaTiO}_{3} film with and without Zr incorporation were investigated based on \hbox {Al}/ \hbox {Al}_{2}\hbox {O}_{3}/\hbox {BaTiO}_{3}/\hbox {SiO}_{2}/\hbox {Si} capacitors. Compared with the device without Zr incorporation, the one with Zr incorporation showed a similar memory window (8.3 V at \pm 12 V for 1 s), but higher program speed at low gate voltage (3.2 V at \hbox {100} \mu\hbox {s} + \hbox {6} \hbox {V} ) and better endurance and data retention (charge loss of 6.4% at 150 ^{\circ} \hbox {C} for \hbox {10}^{4} \hbox {s} ), due to the Zr-doped \hbox {BaTiO}_{3} exhibiting higher charge-trapping efficiency and higher density of traps with deeper energy levels.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 4 )