By Topic

Gain and Phase Recovery Dynamics in Quantum-Dot Vertical-Cavity Semiconductor Optical Amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Keshavarz, F. ; Dept. of Electr. Eng., Tarbiat Modares Univ., Tehran, Iran ; Ahmadi, V.

In this paper, we present a numerical study of gain and phase recovery dynamics in InGaAs/GaAs quantum-dot (QD)-based vertical-cavity semiconductor optical amplifier (SOA) including effects of inhomogeneous broadening and bias currents. It is shown that the effect of inhomogeneous broadening on the gain and phase recovery time is not considerable. The results reveal that the values of the phase change as well as linewidth enhancement factor (LEF) are very small compared to traveling wave QD SOAs due to small length of cavity. Also, in low bias current, incomplete gain and phase recovery and small LEF are observed. For currents greater than 5 mA, the required current for complete ground state filling in Pin = 0 dBm, the complete recovery is calculated. It is shown that with further increasing of current, recovery time reduces while the final LEF value is unchanged.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 5 )