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Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

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5 Author(s)
Yun-Fan Liu ; Zhejiang Provincial Key Lab. for Sensing Technol., Zhejiang Univ., Hangzhou, China ; Zheng Yong ; Yan-Song Jiao ; Wen-Sheng Zhao
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In this paper, we at first propose an almost-carbon interconnects structure consisting of through-silicon carbon nanotube bundle vias (TS-CNTBV), graphene-based transmission lines (GTL) and metal bumps. In order to characterize its electrical performance, an effective complex conductivity of the CNT bundle is introduced and studied for different temperatures and CNT radii. Further, the TS-CNTBV transmission characteristics are investigated based on its distributed transmission line model, and in particular, effects of metallic bump attached to the TS-CNTBV are considered and treated in an appropriate way.

Published in:

Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2012 IEEE

Date of Conference:

9-11 Dec. 2012