By Topic

Effect of Deep N-Well Bias in an 850-nm Si Photodiode Fabricated Using the CMOS Process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Fang-Ping Chou ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan ; Ching-Wen Wang ; Zi-Ying Li ; Yu-Chen Hsieh
more authors

In this letter, we present an 850-nm Si octagonal photodiode (PD) with deep n-well implantation formed using the CMOS process without process modifications. Two different bias schemes (normal bias and extra bias) on the deep n-well were used to analyze the effects of deep n-well bias on the bandwidth and gain-bandwidth performances of Si PDs. The avalanche gain, frequency response, and optical pulse measurements in this letter demonstrate that the extra bias on deep n-well improves the PD performance. To the best of our knowledge, this design achieves the highest bandwidth (8.7 GHz) and a large gain-bandwidth product of 542 GHz with a reverse bias of 11.45 V and an extra voltage of 11.45 V in standard CMOS technology.

Published in:

Photonics Technology Letters, IEEE  (Volume:25 ,  Issue: 7 )