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In this paper, we propose a new method, named on the fly bulk trap (OTFBT) to extract the negative bias temperature instability (NBTI) in MOS transistors. The OTFBT method is based on combination of charge pumping (CP) technique and linear drain current in the same measurement time setup. We emphasize on the theoretical-based concept, giving a clear insight on the easy-use of the OTFBT methodology and demonstrating its feasibility to extract the interface trap ΔNit, oxide trap (hole trapping) ΔNot and mobility degradation induced by NBTI. This method can contribute to further understand the behavior of the NBTI degradation, especially through the threshold voltage shift components such as ΔVit, ΔVot and mobility degradation.
Date of Conference: 14-18 Oct. 2012