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An investigation of trap states at the semiconductor-oxide interface of single silicon nanowires is presented using vertical gate-all-around nanowire MOS capacitors. By performing highly accurate capacitance-voltage measurements at room temperature, the energetic distribution of interface traps Dit could be extracted with the quasi-static method. Although the capacitance of a single nanowire MOS capacitor with Al2O3 gate oxide is only 2 fF, Dit values were obtained with good reproducibility. For etched, vertical Si nanowires, Dit in the range of (4 ±1) × 1012 cm-2eV-1 was obtained.