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Electrical and physical characteristics of the high-k Ti-doped Ce2O3 (Ce2Ti2O7) dielectrics combined with rapid thermal annealing

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4 Author(s)
Chyuan-Haur Kao ; Dept. of Electron. Eng., Chang Gung Univ., Kwei-Shan, Taiwan ; Chien-Jung Liao ; Lien-Tai Kuo ; Che-Chun Liu

In this paper, electrical and physical characteristics of the addition of Ti into Ce2O3 dielectric films on the single crystalline silicon were studied. It can be found that the high-k Ce2Ti2O7 gate dielectrics with post rapid thermal annealing (RTA) can show higher dielectric constant, smaller gate voltage shift, higher breakdown electric field and smaller charge trapping rate.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Date of Conference:

Oct. 29 2012-Nov. 1 2012