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A novel injection-locked frequency divider for V-Band frequency synthesis is proposed in this paper. Thanks to the nMOS realized in triple-well technology with N-well floating, the source and its body can be connected together to get rid of the body effect and thus reduce the nMOS threshold voltage, which helps enhance the injection efficiency in the direct injection-locked frequency dividers. The proposed divider is implemented in 90-nm CMOS technology and draws only 1-mA from 0.9-V low voltage supply. The simulation results show that the proposed frequency divider can work from 52-GHz to 65-GHz with 0-dBm input power. The division bandwidth is improved by 5-GHz comparing to the conventional structures.