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A simple method to accurately determine the temperature dependence of thermal resistance of InP HBTs

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5 Author(s)
Jun Liu ; Key Laboratory for RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310037, China ; Wei Cheng ; Lin Zhang ; Haiyan Lu
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A simple method to accurately determine the nonlinear dependence of the thermal resistance of heterojunction bipolar transistors (HBTs) on ambient and junction temperatures is presented. A nonlinear model of the thermal resistance dependence on the power dissipation is introduced for the actual junction temperature predicting. This method is demonstrated by an accurate extraction of thermal effects of a power HBT with an effective emitter area of 1×15μm2, fabricated with an in-house InP HBT technology.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Date of Conference:

Oct. 29 2012-Nov. 1 2012