By Topic

3D parallel full band ensemble Monte Carlo devices simulation for nano scale devices application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Xiaoyan Liu ; Institute of Microelectronics, Peking University, Beijing, China ; Kangliang Wei ; Gang Du ; Wei Zhang
more authors

A 3D parallel full band ensemble Monte Carlo device simulator is developed for simulation of nano scale semiconductor devices especially for the non planar structures. The transition rates for the various scattering processes including phonon scattering, ionized impurity scattering, remote Coulomb scattering, surface roughness scattering and surface phonon scattering are calculated based on Fermi's golden rule. The quantum effect, quantum correction has been included using the effective potential (EP) method. 3D Poisson equation with non uniform hexahedron grid is solved self-consistently after the carriers' free flight and scattering. We parallelize the 3D MC device simulator by utilizing the Trillions software package.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Date of Conference:

Oct. 29 2012-Nov. 1 2012