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Stoichiometric amorphous hydrogenated silicon carbide thin film synthesis using DC-saddle plasma enhanced chemical vapour deposition

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3 Author(s)
Behzad Jazizadeh Karimi ; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, Canada ; Ali B. Alamin Dow ; Nazir P. Kherani

Silicon carbide is a versatile material amenable to a variety of applications ranging from electrical insulation, surface passivation and diffusion barrier to optical devices. The DC saddle-field plasma enhanced chemical vapour technique is an alternative large area deposition technique. Here we report on the synthesis of stoichiometric hydrogenated amorphous silicon using the dc saddle-field PECVD technique. We also report on the attainment of very smooth surface morphology for the stoichiometric a-SiC:H films in contrast to low carbon content films. Surface roughness of 1 nm rms was demonstrated for films grown at a temperature as low as 225°C.

Published in:

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Date of Conference:

2-4 Jan. 2013