By Topic

Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Hsu, H.W. ; Inst. of Mechatron. Eng., Nat. Taipei Univ. of Technol. (NTUT), Taipei, Taiwan ; Huang, H.S. ; Chen, S.Y. ; Wang, M.C.
more authors

In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress induced by CESL stressor and SiGe-channel on hot-carrier reliability of the strained nMOSFETs has been analyzed through experimental measurements and stress simulation results.

Published in:

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Date of Conference:

2-4 Jan. 2013