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Probing the electrical transport properties of intrinsic InN nanowires

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6 Author(s)
Zhao, S. ; Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada ; Salehzadeh, O. ; Alagha, S. ; Kavanagh, K. L.
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We have studied the electrical transport properties of intrinsic InN nanowires using an electrical nanoprobing technique in a scanning electron microscope environment. It is found that such intrinsic InN nanowires exhibit an ohmic conduction at low bias and a space charge limited conduction at high bias. It is further derived that such InN nanowires can exhibit a free carrier concentration as low as ∼1013cm-3 and possess a very large electron mobility in the range of 8000–12 000 cm2/V s, approaching the theoretically predicted maximum electron mobility at room temperature. In addition, charge traps are found to distribute exponentially just below the conduction band edge, with a characteristic energy ∼65 meV.

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Applied Physics Letters  (Volume:102 ,  Issue: 7 )