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Improved Output Power of GaN-based Blue LEDs by Forming Air Voids on Ar-Implanted Sapphire Substrate

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6 Author(s)
Jinn-Kong Sheu ; Department of Photonics, Advanced Optoelectronic Technology Center & Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan City, Taiwan ; Yu-Hsiang Yeh ; Shang-Ju Tu ; Ming-Lun Lee
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This paper investigates GaN-based blue light-emitting diodes (LEDs) grown on sapphire substrates with selective-area Ar-ion implantation. The GaN-based epitaxial layers grown on the Ar-implanted sapphire substrates (Ar-ISS) exhibited selective growth and subsequent lateral growth because of different lattice constants between the implantation and implantation-free regions. As a result, air voids were formed at the GaN/sapphire interface, above the implanted regions and below the active layers of LEDs. We proposed the GaN layer growth mechanisms on the Ar-ISS, and characterized the LEDs with embedded air voids at the GaN/sapphire interface. Using a 20-mA current injection, the light output of the experimental LEDs was found to be 15% greater than that of conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/air void interfaces, which increases the probability of photons escaping from the LEDs.

Published in:

Journal of Lightwave Technology  (Volume:31 ,  Issue: 8 )