We present temperature dependent surface photovoltage spectra of GaAs1-xSbx/GaAs multiple quantum well structures. Our previous studies [Sitarek etal, J. Appl. Phys. 105, 123523 (2009)] have identified all features present in the surface photovoltage spectra and showed weak type-I band alignment in the investigated GaAsSb/GaAs system. By analyzing the changes in the relative intensity of features near the energy of fundamental transitions caused by the temperature variations, we are able to determine the energy difference between electronic states localized in GaAsSb quantum well and conduction band edge in the GaAs barrier. In addition, the Bose-Einstein parameters that describe the temperature dependences of 1hh-1e transitions are evaluated and discussed.