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MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

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13 Author(s)
Fan, Dongsheng ; Department of Electrical Engineering and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 ; Grant, Perry C. ; Yu, Shui-Qing ; Dorogan, Vitaliy G.
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GaAsBi/GaAs double quantum wells and double quantum well separate confinement heterostructures are grown at low temperatures using molecular beam epitaxy. Methods of achieving identical quantum wells in double quantum well structures without growth interruption are proposed and implemented. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that the samples have excellent structural and optical properties. The high optical quality of the samples is attributed to the surfactant effect of Bi throughout the low temperature growth of GaAs and AlGaAs layers. The proposed approach can be extended to grow laser diode structures with multiple quantum well separate confinement heterostructures containing more identical quantum wells.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:31 ,  Issue: 3 )