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A 210–227 GHz Transmitter With Integrated On-Chip Antenna in 90 nm CMOS Technology

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3 Author(s)
Khamaisi, B. ; Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel ; Jameson, S. ; Socher, E.

This paper presents a transmitter operating in the 210-227 GHz in 90 nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. A simplified model is presented for the operation and the design of the circuit, which compares well with simulated and measured results. The transmitter achieves an EIRP of +1.8 dBm at 217 GHz and directivity of about +10 dBi. The circuit consumes 128 mW of DC power and an area of 0.53 mm2.

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Terahertz Science and Technology, IEEE Transactions on  (Volume:3 ,  Issue: 2 )