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A low-noise K-Ka band oscillator AlGaAs/GaAs heterojunction bipolar transistors

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2 Author(s)
Madhihian, M. ; NEC Corp., Kawasaki ; Takahashi, H.

The design considerations, fabrication process, and performance of the first K-Ka-band oscillator implemented using a self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT) are described. A large-signal time-domain-based design approach has been used which applies a SPICE-F simulator for optimization of the oscillator circuit parameters for maximum output power. The oscillator employs a 2×10-μm2 emitter AlGaAs/GaAs HBT that was fabricated using a pattern inversion technology. The HBT has a base current 1/f noise power density lower than 1×10-20 A2/Hz at 1 kHz and lower than 1×10-22 A/2/Hz at 100 kHz for a collector current of 1 mA. The oscillator, which is composed of only low-Q microstrip transmission lines, has a phase noise of -80 dBc/Hz at 100 kHz off carrier when operated at 26.6 GHz. These results indicate the applicability of the HBTs to low-phase-noise monolithic oscillators at microwave and millimeter-wave frequencies, where both Si bipolar transistors and GaAs FETs are absent

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:39 ,  Issue: 1 )