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The enhancement of the charge injection and field effect mobility by inserting a thin (5 nm) germanium oxide (GeO) interlayer between the Au electrode and pentacene layer in a top contact pentacene based organic thin-film transistor (OTFTs) was reported. In comparison with the pentacene-based OTFT with only-Au electrode, the device performance has been considerably improved, which exhibits the highest field effect mobility of 0.96 cm2/Vs. The improvement was attributed to significant reduction of barrier height at Au/pentacene interfaces and smoothed surface of pentacene layer after inserting a thin GeO layer.