By Topic

A 60-GHz Power Amplifier Design Using Dual-Radial Symmetric Architecture in 90-nm Low-Power CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jin-Fu Yeh ; Department of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan ; Jeng-Han Tsai ; Tian-Wei Huang

An innovative on-chip 3-D power amplifier (PA) architecture for M-way power-combined CMOS PAs by using the proposed dual-radial symmetric architecture is presented. It provides design freedom of impedance selection of power device in transformer-based millimeter-wave PA design. This idea also makes distinguished breakthrough to the traditional 2-D PA architecture without compromising symmetry and compact size of layout. To demonstrate the feasibility of this idea, a 60-GHz PA is fabricated in 90-nm low-power CMOS process. It is also equipped with multi-mode operation. It achieves an output power of 18.5 dBm and a power-added efficiency of 10.2% with 1.2-V supply voltage. At 6-dB/10-dB power back-off operation, the drain efficiencies of power stage can be enhanced from 5.9%/2.4% to 11.9%/8%, respectively, by enabling the multi-mode operation.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:61 ,  Issue: 3 )