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Al-doped ZnO thin-film transistor embedded micro-cantilever as a piezoresistive sensor

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2 Author(s)
Ray, Prasenjit ; Electrical Engineering Department, Centre of Excellence in Nanoelectronics, IIT Bombay, Mumbai 400076, India ; Ramgopal Rao, V.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4792062 

In this work, an aluminium-doped zinc oxide (AZO) thin film transistor, embedded in a polymer micro-cantilever, is demonstrated for nano-mechanical sensing applications. This device senses the surface stress due to a change in the carrier mobility of the semi-conducting layer. Due to the low Young's modulus and high strain sensitivity of the AZO layer, this micro-cantilever shows a deflection sensitivity of 116 ppm per nanometer of deflection. Also, mechanical characterization of these devices shows that the resonance frequency is in the range of a few tens of kilohertz which is suitable for sensor applications.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 6 )

Date of Publication:

Feb 2013

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