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RF performance of a novel planar millimeter-wave diode incorporating an etched surface channel

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3 Author(s)
Garfield, D.G. ; Stanford Telecommun. Inc., Reston, VA, USA ; Mattauch, R.J. ; Weinreb, S.

A whiskerless millimeter-wave mixer diode that yields performance comparable to that of the highest-quality whisker-contacted diodes is discussed. The diode uses an etched surface channel and planar air bridge to obtain greatly reduced parasitic capacitance. At 94 GHz, the room-temperature diode exhibited a conversion loss of 5.3 dB±0.5 dB and an equivalent input noise temperature of 518 K±50 K SSB (single sideband)

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:39 ,  Issue: 1 )

Date of Publication:

Jan 1991

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