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High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz

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6 Author(s)
Yuen, C. ; Varian Res. Center, Palo Alto, CA, USA ; Nishimoto, C. ; Pao, Y.C. ; Day, M.
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Ultra-broad-bandwidth distributed amplifiers with cutoff frequencies of 45 and 60 GHz have been developed utilizing 0.25-μm AlGaAs and InP cascode HEMTs (high electron mobility transistors) with a mushroom gate profile. A measured gain a high as 10±1 dB from 5 to 50 GHz and a gain of 8±1 dB from 5 to 60 GHz have been achieved from amplifiers using AlGaAs HEMTs. Amplifiers fabricated on InP HEMT material have demonstrated a gain of 15±1 dB from 5 to 50 GHz and 12±1 dB from 5 to 60 GHz. The measured noise figure for these amplifiers is approximately 2.5-4 dB in the Ka-band. The measured P1 dB is around 12.5 dBm at 40 GHz. The chip size is 2.3×0.9 mm2

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:38 ,  Issue: 12 )