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In this paper we propose a novel design of a low power static random access memory (SRAM) cell for high speed operations. The model adopts the voltage mode method for reducing the voltage swing during the write operation switching activity. Dynamic power dissipation increases when the operating frequency of the SRAM cell increases. In the proposed design we use two voltage sources connected with the Bit line and Bit bar line for reducing the voltage swing during the write “0” or write “1” operation. We use 90 nm CMOS technology with 1 volt of power supply. Simulation is done in Microwind 3.1 by using BSim4 model. Dynamic power for different frequencies is calculated. We compare it with conventional 6-T SRAM cell. The simulation results show that the power dissipation is almost constant even the frequency of the proposed SRAM model increases. This justifies the reduction of the dynamic power dissipation for high frequency CMOS VLSI design.