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A 500μA low drop-out voltage regulator in 90-nm CMOS technology

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2 Author(s)
Hicham, A. ; Lab. d'Electron., Univ. Sidi Mohamed Ben Abdellah, Fès, Morocco ; Qjidaa, H.

The paper presents a CMOS low-dropout voltage regulator (LDO). By using wideband and low-current circuit techniques, high performances in terms of transient response, Implemented in 90-nm CMOS technology. The proposed LDO voltage regulator with 50-mA driving capability is presented utilizes paralleled input differential pairs and current amplifiers to provide fast transient response, the LDO itself should provide 0.1μs with transient variation of the voltage less than 153mV.

Published in:

Complex Systems (ICCS), 2012 International Conference on

Date of Conference:

5-6 Nov. 2012