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This paper presents the readout circuit based on Direct Injection (DI) and Capacitive Transimpedance Amplifier (CTIA). The hybrid type of CTIA and DI was adopted as the pixel circuit's design in this paper. The two different structures were combined into unit pixels, and each pixel has two modes of readout. Furthermore, the chip was produced with TSMC 2P4M 5V technology, and the array size is 10×8. The output swing is 2.1V and power consumption is 9.4 mW, according to measurement results. The Layout area is 40um × 40um, and the two modes are selected by an external pin. The dual mode structure enables single- and dual-band infrared sensors. The readout chip can operate in 2kHz ~ 6MHz, and the input photocurrent range is 1pA ~ 50nA, depending on integration time; thus, it can be suitable for various detectors.